0

102030

405060708090

100

1E-1

1E+0

1E+1

1E+2

1E+3

IR(µA)

Tj=25°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=125°C

VR(V)

Fig. 2: Leakage current versus reverse voltage ap-

plied (typical values)

0

25

50

75

100

125

1E-1

1E+0

1E+1

1E+2

1E+3

IR(µA)

VR=75V

Tj(°C)

Fig. 3: Leakage current versus junction temperature

(typical values)

1

10

100

1

2

5

10

C(pF)

F=1MHz

Tj=25°C

VR(V)

Fig. 4: Junction capacitance versus reverse voltage

applied (typical values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0

2

4

6

8

10

12

14

16

18

20

IFM(mA)

Tj=125°C

Tj=25°C

VFM(V)

Fig. 1-1: Forward voltage drop versus forward cur-

rent (low level, typical values)

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

1E-2

1E-1

5E-1

IFM(A)

Tj=125°C

Tj=25°C

VFM(V)

Fig. 1-2: Forward voltage drop versus forward cur-

rent (high level, typical values)

BAT46

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