BAT54 datasheet(2/5 Pages) STMICROELECTRONICS

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Symbol

Parameters

Tests conditions

Min.

Typ.

Max.

Unit

VF *

Forward voltage drop

Tj = 25

°CIF = 0.1 mA

240

IF = 1 mA

320

IF = 10 mA

400

IF = 30 mA

500

IF = 100 mA

900

IR **

Reverse leakage current

Tj = 25

°CVR = 30 V

µA

Tj = 100

°C

100

Pulse test :

* tp = 380

µs, δ < 2%

** tp = 5 ms,

δ < 2%

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameters

Tests conditions

Min.

Typ.

Max.

Unit

Junction

capacitance

Tj = 25

°CVR = 1 V F = 1 MHz

trr

Reverse recovery

time

IF = 10 mA

IR = 10 mA Tj = 25°C

Irr = 1 mA

RL = 100

Ω

5ns

DYNAMIC CHARACTERISTICS (Tj = 25 °C)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

PF(av)(W)

δ = 0.2

δ = 0.5

δ = 1

δ = 0.05

δ = 0.1

IF(av) (A)

δ=tp/T

Fig.1 : Average forward power dissipation versus

average forward current.

100

125

150

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

IF(av)(A)

δ=tp/T

Tamb(°C)

Fig.2 : Average forward current versus ambient

temperature (

δ = 1).

Symbol

Parameter

Value

Unit

Rth (j-a)

Junction to ambient (*)

500

°C/W

(*) Mounted on epoxy board with recommended pad layout.

THERMAL RESISTANCE

BAT54, A, C, S

2/5

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