T2035H datasheet(5/10 Pages) STMICROELECTRONICS

5 / 10 page

T2035H Series

Characteristics

5/10

Figure 9.

Relative variation of critical rate of

decrease of main current (di/dt)c vs

reapplied (dV/dt)c

Figure 10. Relative variation of critical rate of

decrease of main current (di/dt)c

versus junction temperature

(dI/dt)

c [(dV/dt) c ] / Specified (dI/dt)c

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

1.0

10.0

100.0

dV/dt (V/µs)

(dI/dt)

c [Tj]/ (dI/dt)c [Tj=125°C]

100

125

150

Tj(°C)

Figure 11. Leakage current versus junction

temperature for different values of

blocking voltage (typical values)

Figure 12. Acceptable repetitive peak off-state

voltage versus case-ambient

thermal resistance

Figure 13. D2PAK junction to ambient thermal

resistance versus copper surface

under tab (PCB FR4, copper

thickness 35 µm)

DRM/IRRM(mA)

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

100

125

150

DRM=VRRM=400 V

DRM=VRRM=600 V

DRM=VRRM=200 V

Tj(°C)

300

350

400

450

500

550

600

th(c-a)(°C/W)

VDRM/VRRM(V)

Rth(j-c)=1°C/W

TJ=150°C

th(j-a)(°C/W)

D²PAK

SCU(cm²)

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