BC107 datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

200

500

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collect or Cut-off

Current (IE =0)

for BC107

VCB =40 V

Tcas e =150

for BC108

VCB =20 V

Tcas e =150

µA

V(BR)CBO

Collect or-Base

Breakdown Volt age

(I E = 0)

IC =10

µA

for BC107

for BC108

V( BR)CEO

∗ Collector-Emitter

Breakdown Volt age

(IB =0)

IC =10 mA

for BC107

for BC108

V(BR)EBO

Emitt er-Base

Breakdown Volt age

(IC =0)

IE =10

µA

for BC107

for BC108

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =10 mA

IB =0.5 mA

IC =100 mA

IB =5 mA

200

250

600

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =10 mA

IB =0.5 mA

IC =100 mA

IB =5 mA

750

950

VBE(on)

∗ Base-Emitter On

Voltage

IC =2 mA

VCE =5 V

IC =10 mA

VCE =5 V

550

650

700

770

hFE

∗

DC Current G ain

IC =2 mA

VCE =5 V

for BC107

for BC107 Gr. A

for BC107 Gr. B

for BC108

for BC108 Gr. A

for BC108 Gr. B

for BC108 Gr. C

IC =10

µAVCE =5 V

for BC107

for BC107 Gr. A

for BC107 Gr. B

for BC108

for BC108 Gr. A

for BC108 Gr. B

for BC108 Gr. C

110

200

110

200

420

100

120

150

120

150

270

450

220

450

800

220

450

800

hfe

∗

Small Signal Current

Gain

IC =2 mA

VCE =5 V

f =1KHz

for BC107

for BC107 Gr. A

for BC107 Gr. B

for BC108

for BC108 Gr. A

for BC108 Gr. B

for BC108 Gr. C

IC =10 mA VCE = 10 V f = 100 MHz

250

190

300

370

190

300

500

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1%

BC107/BC108

2/6

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