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BC393 数据表(PDF) 2 Page - STMicroelectronics |
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BC393 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 5 page ![]() ELECTRICAL CHARACTERISTICS (T amb =25 °C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CB O Collector Cutoff Current (IE = 0 ) VCB =– 100 V VCB = – 100 V T amb =150 °C 50 50 nA µA V(BR) CBO Collector-base Breakdown Voltage (IE = 0 ) I C =– 10 µA– 180 V V(BR) CEO * Collector-emitter Breakdown Voltage (IB = 0 ) I C =– 2 mA – 180 V V(BR) EBO Emiter-base Breakdown Voltage (IC = 0 ) I E =– 10 µA– 6 V VCE (s at ) * Collector-emitter Saturation Voltage IC =– 10 mA I C =– 50 mA I B = –1mA I B = –5mA –100 –230 –300 mV mV VBE (sat) * Base-emitter Saturation Voltage IC =– 10 mA I C =– 50 mA I B = –1mA I B = –5mA –750 –850 –900 mV mV h FE * DC Curent Gain I C =– 1 mA I C =– 10 mA VCE =– 10 V VCE =– 10 V 50 85 100 f T Transition frequency I C = – 10 mA VCE = – 10 V 50 95 MHz C CBO Collector-base Capacitance IE =0 f = 1 MHz VCB =– 10 V 47 pF * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. DC Current Gain. Collector-emitter Saturation Voltage. THERMAL DATA Rth j-cas e R th j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Ma x Ma x 125 440 °C/W °C/W BC393 2/5 |
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