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BCP55 数据表(PDF) 2 Page - STMicroelectronics

部件名 BCP55
功能描述  MEDIUM POWER AMPLIFIER
PDF  4 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

BCP55 数据表(HTML) 2 Page - STMicroelectronics

  BCP55 Datasheet HTML 1Page - STMicroelectronics BCP55 Datasheet HTML 2Page - STMicroelectronics BCP55 Datasheet HTML 3Page - STMicroelectronics BCP55 Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-amb
Rthj-tab
Thermal Resistance Junction-Ambient
Max
Thermal Resistance Junction-Collecor Tab
Max
62.5
8
oC/W
oC/W
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 30 V
VCB = 30 V
Tj = 125
oC
100
10
nA
µA
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = 100
µA
for BCP55
for BCP56
60
100
V
V
V(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 20 mA
for BCP55
for BCP56
60
80
V
V
V(BR)CER
Collector-Emitter
Breakdown Voltage
(RBE = 1 K
Ω)
IC = 100
µA
for BCP55
for BCP56
60
100
V
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IC = 10
µA
5
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 500 mA
IB = 50 mA
0.5
V
VBE(on)
∗ Base-Emitter On
Voltage
IC = 500 mA
VCE = 2 V
1
V
hFE
DC Current Gain
IC = 5 mA
VCE = 2 V
IC = 150 mA
VCE = 2 V
for Gr. 6
IC = 150 mA
VCE = 2 V
for Gr. 10
IC = 150 mA
VCE = 2 V
for Gr. 16
IC = 500 mA
VCE = 2 V
25
40
63
100
25
100
160
250
fT
Transition Frequency
IC = 10 mA
VCE = 5 V
f = 35 MHz
130
MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
BCP55/56
2/4



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