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BCP56 数据表(PDF) 2 Page - STMicroelectronics |
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BCP56 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() THERMAL DATA Rthj-amb • Rthj-tab • Thermal Resistance Junction-Ambient Max Thermal Resistance Junction-Collecor Tab Max 62.5 8 oC/W oC/W • Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 30 V VCB = 30 V Tj = 125 oC 100 10 nA µA V(BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = 100 µA for BCP55 for BCP56 60 100 V V V(BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = 20 mA for BCP55 for BCP56 60 80 V V V(BR)CER Collector-Emitter Breakdown Voltage (RBE = 1 K Ω) IC = 100 µA for BCP55 for BCP56 60 100 V V V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IC = 10 µA 5 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 500 mA IB = 50 mA 0.5 V VBE(on) ∗ Base-Emitter On Voltage IC = 500 mA VCE = 2 V 1 V hFE ∗ DC Current Gain IC = 5 mA VCE = 2 V IC = 150 mA VCE = 2 V for Gr. 6 IC = 150 mA VCE = 2 V for Gr. 10 IC = 150 mA VCE = 2 V for Gr. 16 IC = 500 mA VCE = 2 V 25 40 63 100 25 100 160 250 fT Transition Frequency IC = 10 mA VCE = 5 V f = 35 MHz 130 MHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % BCP55/56 2/4 |
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