BCW66 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-amb

•

Rth j-SR

•

Thermal Resistance Junction-Ambient

Max

Thermal Resistance Junction-Substrat e

Max

375

278

oC/W

• Mounted on a ceramic substrate area = 0.7 mm x 2.5 cm2

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collect or Cut-off

Current (VBE =0)

VCE =Rated VCES

Tamb = 150

µA

IEBO

Collect or Cut-off

Current (IE =0)

VEB =4 V

V( BR)CEO

∗ Collector-Emitter

Breakdown Volt age

(IB =0)

IC =10 mA

V(BR)CES

∗ Collector-Emitter

Breakdown Volt age

(VEB =0)

IC =10

µA75

V(BR)EBO

Emitt er-Base

Breakdown Volt age

(IC =0)

IC =10

µA5

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =100 mA

IB =10 mA

IC =500 mA

IB =50 mA

0.3

0.7

VBE(s at)

∗ Collector-Base

Saturat ion Voltage

IC =100 mA

IB =10 mA

IC =500 mA

IB =50 mA

1.25

hFE

∗

DC Current G ain

IC =0.1 mA

VCE =10 V

for grou p F

for grou p G

for grou p H

IC =10 mA

VCE =1 V

for grou p F

for grou p G

for grou p H

IC =100 mA

VCE =1 V

for grou p F

for grou p G

for grou p H

IC =500 mA

VCE =2 V

for grou p F

for grou p G

for grou p H

110

180

100

160

250

100

250

400

630

Transit ion F requency

IC =20 mA VCE = 10V f = 100MHz

100

MHz

CCB

Collect or Base

Capacitance

IE =0

VCB = 10 V

f = 1 MHz

CEB

Emitt er Base

Capacitance

IC =0

VCE =0.5 V

f =1 MHz

Noise Figure

VCE =5 V

IC =0.2 mA

f = 1KHz

∆f = 200 Hz RG =2 KΩ

210

ton

Switching On Time

IC =150 mA

IB1 =-IB2 =15 mA

RL =150

Ω

100

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

BCW66

2/4

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