BCW69 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj- amb

• Thermal Resistance Junction-Ambient

Max

420

oC/W

• Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collect or Cut-off

Current (IE =0)

VCB =-20 V

Tj =100

-100

-10

µA

V(BR)CES

∗ Collector-Emitter

Breakdown Volt age

(VBE =0)

IC =-10

µA-50

V( BR)CEO

∗ Collector-Emitter

Breakdown Volt age

(IB =0)

IC =-2 mA

-45

V( BR)CBO

∗ Collector-Base

Breakdown Volt age

(IE =0)

IC =-10

µA-50

V(BR)EBO

Emitt er-Base

Breakdown Volt age

(IC =0)

IE =-10

µA-5

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =-10 mA

IB =-0.5 mA

IC =-50 mA

IB = -2.5 mA

-0.18

-0.3

VBE(s at)

∗ Collector-Base

Saturat ion Voltage

IC =-10 mA

IB =-0.5 mA

IC =-50 mA

IB =-2.5 mA

-0.72

-0.81

VBE(on)

∗ Base-Emitter On

Voltage

IC =-2 mA

VCE = -5 V

-0.6

-0.75

hFE

∗

DC Current G ain

for BCW 69

IC =-10

µAVCE =-5 V

IC =-2 mA

VCE =-5 V

for BCW 70

IC =-10

µAVCE =-5 V

IC =-2 mA

VCE =-5 V

120

215

150

260

500

Transit ion F requency

IC =-10 mA VCE = -5 V f = 100 MHz

150

MHz

CCB

Collect or Base

Capacitance

IE =0

VCB =-10 V

f = 1MHz

Noise Figure

IC =-0.2mA

VCE =-5 V

f = 1KHz

∆f = 200 Hz Rg =2KΩ

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

BCW69/BCW70

2/4

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