BD135 datasheet(2/4 Pages) STMICROELECTRONICS

部件名	BD135

功能描述	NPN SILICON TRANSISTORS

PDF	4 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 4 page

THERMAL DATA

Rthj-ca se

Thermal Resistance Junction-case

Max

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collector Cut -of f

Current (IE =0)

VCB =30 V

TC =125

0.1

µA

IEBO

Emitt er Cut -of f Current

(IC =0)

VEB =5 V

µA

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

IC =30 mA

for BD135

for BD139

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC =0.5 A

IB =0.05 A

0.5

VBE

∗

Base-Emitt er Voltage

IC =0.5 A

VCE =2 V

hFE

∗

DC Current Gain

IC =5 mA

VCE =2 V

IC =0. 5 A

VCE =2 V

IC =150 mA

VCE =2 V

250

hFE

hFE Groups

IC =150 mA

VCE =2 V

for BD139 group 10

160

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

BD135 / BD139

2/4

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