BD234 datasheet(2/4 Pages) STMICROELECTRONICS

部件名	BD234

功能描述	SILICON PNP TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = -45 V

Tc = 150

-0.1

-2

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -5 V

-1

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

IC = -100 mA

-45

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -1 A

IB = -0.1 A

-0.6

VBE

∗

Base-Emitter Voltage

IC = -1 A

VCE = -2 V

-1.3

hFE

∗

DC Current Gain

IC = -150 mA

VCE = -2 V

IC = -1 A

VCE = -2 V

Transition frequency

IC = -250 mA

VCE = -10 V

MHz

hFE1/hFE2

∗ Matched Pairs

IC = -150 mA

VCE = -2 V

1.6

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BD234

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