BD237 datasheet(2/5 Pages) STMICROELECTRONICS

部件名	BD237

功能描述	COMPLEMENTARY SILICON POWER TRANSISTORS

PDF	5 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2 / 5 page

THERMAL DATA

Rthj-ca se

Thermal Resistance Junction-case

Max

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collect or Cut-off

Current (IE =0)

VCE =rated VCEO

Tc =150

o C

0.1

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =5 V

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

IC =100 mA

for BD235/BD236

for BD237/BD238

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =1 A

IB = 0.1 A

0.6

VBE

∗

Base-Emitt er Voltage

IC =1 A

VCE =2 V

1.3

hFE

∗

DC Current G ain

IC =150 mA

VCE =2 V

IC =1 A

VCE =2 V

Transit ion f requency

IC =250 mA

VCE =10 V

MHz

hFE1/hFE2

∗ Matched Pairs

IC =150 mA

VCE =2 V

1.6

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Derating Curves

BD235/BD236/BD237/BD238

2/5

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