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BD243C 数据表(PDF) 1 Page - STMicroelectronics |
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BD243C 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() BD243B/BD243C BD244B/BD244C COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244B and BD244C respectively. ® INTERNAL SCHEMATIC DIAGRAM September 1999 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Uni t NPN BD243B BD243C PNP BD244B BD244C VCBO Collect or-Base Voltage (IE =0) 80 100 V VCEO Collect or-Emitter Voltage (IB =0) 80 100 V VEBO Emitter-Base Voltage (IC =0) 5 V IC Collect or Current 6 A ICM Collect or Peak Current 10 A IB Base Current 2 A Ptot Tot al Dissipation at Tc ≤ 25 oC 65 W Tstg Storage T emperat ure -65 to 150 oC Tj Max. O perating Junction Temperature 150 oC For PNP types voltage and current values are negative. 1 2 3 TO-220 1/4 |
类似零件编号 - BD243C |
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类似说明 - BD243C |
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