BD336 datasheet(2/4 Pages) STMICROELECTRONICS

部件名	BD336

功能描述	SILICON PNP POWER DARLINGTON TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

2 / 4 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

2.08

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = -100 V

TC = 150

-0.2

-2

ICEO

Collector Cut-off

Current (IB = 0)

VCE = -50 V

-0.5

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = -5 V

-5

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = -3 A

IB = -12 mA

-2

VBE

∗

Base-Emitter Voltage

IC = -3 A

VCE = -3 V

-2.5

hFE

∗

DC Current Gain

IC = -0.5 A

VCE = -3 V

IC = -3 A

VCE = -3 V

IC = -6 A

VCE = -3 V

750

2700

400

∗

Parallel Diode Forward

Voltage

IF = -3 A

-1.8

hfe

Small Signal Current

Gain

IC = -3 A

VCE = -3 V

f = 1MHz

150

ton

Turn on Time

IC = -3 A

VCC = -30 V

IB1 = -IB2 = -12 mA

µs

toff

Turn off Time

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %

BD336

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