BD433 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

3.5

100

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

for BD433/434

VCB = 22 V

for BD435/436

VCB = 32 V

for BD437/438

VCB = 45 V

100

µA

ICES

Collector Cut-off

Current (VBE = 0)

for BD433/434

VCE = 22 V

for BD435/436

VCE = 32 V

for BD437/438

VCE = 45 V

100

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

for BD433/434

for BD435/436

for BD437/438

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 2 A

IB = 0.2 A

for BD433/434

for BD435/436

for BD437/438

0.2

0.5

0.6

VBE

∗

Base-Emitter Voltage

IC = 10 mA

VCE = 5 V

IC = 2 A

VCE = 1 V

for BD433/434

for BD435/436

for BD437/438

0.58

1.1

1.2

hFE

∗

DC Current Gain

IC = 10 mA

VCE = 5 V

for BD433/434

for BD435/436

for BD437/438

IC = 500 mA

VCE = 1 V

IC = 2 A

VCE = 1 V

for BD433/434

for BD435/436

for BD437/438

130

140

hFE1

/hFE2∗ Matched Pair

IC = 500 mA

VCE = 1 V

1.4

Transition frequency

IC = 250 mA

VCE = 1 V

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BD433/434/435/436/437/438

2/4

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