4

TL7700

SLVS220G – JULY 1999 – REVISED AUGUST 2016

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Copyright © 1999–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values are with respect to the network ground terminal.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

VCC

Supply voltage(2)

41

V

Vs

Sense input voltage

–0.3

41

V

VOH

Output voltage (off state)

41

V

IOL

Output current (on state)

5

mA

TJ

Operating virtual-junction temperature

150

°C

Tstg

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

500

V

Charged-device model (CDM), per JEDEC specification JESD22-

C101(2)

1000

6.3 Recommended Operating Conditions

MIN

MAX

UNIT

VCC

Supply voltage

1.8

40

V

IOL

Low-level output current

3

mA

TA

Operating free-air temperature

–40

85

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

TL7700

UNIT

DGK

(VSSOP)

P

(PDIP)

PS

(SO)

PW

(TSSOP)

8 PINS

8 PINS

8 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance

173.8

57.6

112.5

172.9

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

63.1

47.4

64.2

56.6

°C/W

RθJB

Junction-to-board thermal resistance

93.9

34.7

61.6

101.2

°C/W

ψJT

Junction-to-top characterization parameter

8.5

25

25.1

5.2

°C/W

ψJB

Junction-to-board characterization parameter

92.5

34.6

60.7

99.6

°C/W