BDW83C datasheet(1/4 Pages) STMICROELECTRONICS

部件名	BDW83C

功能描述	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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BDW83C

BDW84C

COMPLEMENTARY SILICON POWER DARLINGTON

TRANSISTORS

s

BDW83C IS A SGS-THOMSON PREFERRED

SALESTYPE

s

COMPLEMENTARY PNP - NPN DEVICES

s

HIGH CURRENT CAPABILITY

s

FAST SWITCHING SPEED

s

HIGH DC CURRENT GAIN

APPLICATIONS

s

LINEAR AND SWITCHING INDUSTRIAL

EQUIPMENT

DESCRIPTION

The BDW83C is a silicon epitaxial-base NPN

power monolithic Darlington transistor mounted in

Jedec TO-218 plastic package. It is intended for

use in power linear and switching applications.

The complementary type is BDW84C.

INTERNAL SCHEMATIC DIAGRAM

June 1997

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

NPN

BDW83C

PNP

BDW84C

VCBO

Collector-Base Voltage (IE = 0)

100

V

VCEO

Collector-Emitter Voltage (IB = 0)

100

V

VEBO

Emitter-Base Voltage (IC = 0)

5

V

IC

Collector Current

15

A

ICM

Collector Peak Current

40

A

IB

Base Current

0.5

A

Ptot

Total Dissipation at Tc

≤ 25 oC

130

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

1

2

3

TO-218

1/4

类似零件编号 - BDW83C

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STMicroelectronics	BDW83C	115Kb / 8P	NPN power Darlington transistor 16-Nov-2007
Savantic, Inc.	BDW83C	147Kb / 3P	Silicon NPN Power Transistors

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