BD912 datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1. 4

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symbo l

Parameter

Test Con ditions

Min.

T yp.

Max.

Unit

ICBO

Collector Cut -of f

Current (IE =0)

for BD909/910

VCB =80 V

for BD911/912

VCB = 100 V

Tcase =150

for BD909/910

VCB =80 V

for BD911/912

VCB = 100 V

500

µA

ICEO

Collector Cut -of f

Current (IB =0)

for BD909/910

VCE =40 V

for BD911/912

VCE =50 V

IEBO

Emitter Cut-off Current

(IC =0)

VEB =5 V

VCEO(s us)

∗ Collector-Emitter

Sustaining Voltage

(IB =0)

IC =100 mA

for BD909/ 910

for BD911/912

100

VCE(sat)

∗ Collector-Emitter

Sat uration Volt age

IC =5 A

I B =0. 5 A

IC =10 A

IB =2.5 A

VBE(sat)

∗ Base-Emitter

Sat uration Volt age

IC =10 A

IB = 2.5 A

2.5

VBE

∗

Base-Emitter Voltage

IC =5 A

VCE =4 V

1. 5

hFE

∗

DC Current Gain

IC =0.5 A

VCE =4 V

IC =5 A

VCE =4 V

IC =10 A

VCE =4 V

250

150

Transition frequency

IC =0.5 A

VCE =4 V

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP types voltage and current values are negative.

Safe Operating Area

Derating Curves

BD909 / BD910 / BD911 / BD912

2/6

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