Nexperia

PRMH13

50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET)

PRMH13

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2017. All rights reserved

Product data sheet

8 August 2017

5 / 13

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base cut-off

current (emitter open)

VCB = 50 V; IE = 0 A; Tamb = 25 °C

-

-

100

nA

VCE = 30 V; IB = 0 A; Tamb = 25 °C

-

-

1

µA

ICEO

collector-emitter cut-off

current (base open)

VCE = 30 V; IB = 0 A; Tj = 150 °C

-

-

5

µA

IEBO

emitter-base cut-off

current (collector open)

VEB = 5 V; IC = 0 A; Tamb = 25 °C

-

-

170

µA

hFE

DC current gain

VCE = 5 V; IC = 10 mA; Tamb = 25 °C

100

-

-

VCEsat

collector-emitter

saturation voltage

IC = 5 mA; IB = 0.25 mA; Tamb = 25 °C

-

-

100

mV

VI(off)

off-state input voltage

VCE = 5 V; IC = 100 µA; Tamb = 25 °C

-

0.6

0.5

V

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 5 mA; Tamb = 25 °C

1.3

0.9

-

V

R1

bias resistor 1

[1]

3.3

4.7

6.1

kΩ

R2/R1

bias resistor ratio

Tamb = 25 °C

[1]

8

10

12

CC

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

-

-

2.5

pF

fT

transition frequency

VCE = 5 V; IC = 10 mA; f = 100 MHz;

Tamb = 25 °C

[2]

-

230

-

MHz

[1] See section "Test information" for resistor calculation and test conditions.

[2] Characteristics of built-in transistor

IC (mA)

10-1

102

10

1

006aac819

102

10

103

hFE

1

(1)

(2)

(3)

VCE = 5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 3. DC current gain as a function of collector

current; typical values

VCE (V)

0

5

4

2

3

1

aaa-018581

0.04

0.06

0.02

0.08

0.1

IC

(A)

0

IB = 0.07 mA

0.14 mA

0.21 mA

0.28 mA

0.35 mA

0.42 mA

0.70 mA

0.49 mA

0.63 mA

0.56 mA

Tamb = 25 °C

Fig. 4. Collector current as a function of collector-

emitter voltage; typical values