BF257 datasheet(2/5 Pages) STMICROELECTRONICS

2 / 5 page

ELECTRICAL CHARACTERISTICS (Tamb =25 °C unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I CB O

Collector Cutoff Current

(I E =0)

for BF257

for BF258

for BF259

VCB = 100 V

VCB = 200 V

VCB = 250 V

V(BR) CB O

Collector-base

Breakdown Voltage

(I E =0)

I C =100 µA

for BF257

for BF258

for BF259

160

250

300

V(BR)CEO *

Collector-emitter

Breakdown Voltage

(I B =0)

I C =10 mA

for BF257

for BF258

for BF259

160

250

300

V(BR) EB O

Emittter-base

Breakdown Voltage

(I C =0)

I E =100 µA5

VCE (s at)*

Collector-emitter

Saturation Voltage

I C =30 mA

I B =6 mA

h FE*

DC Current Gain

IC =30 mA

VCE =10 V

f T

Transition Frequency

I C =15 mA

VCE =10 V

MHz

Cre

Reverse Capacitance

IC =0

f= 1 MHz

VCE =30 V

3pF

Pulsed : pulse duration = 300

µs, duty cycle = 1 %.

DC Current Gain.

THERMAL DATA

Rth j-cas e

R th j-amb

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max

175

°C/W

BF257-BF258-BF259

2/5

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