BFW43 datasheet(2/5 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

125

438

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collect or Cut-off

Current (IE =0)

VCE =-100 V

Tamb =125

-0. 2

-0.03

-10

µA

V( BR)CBO

∗ Collector-Base

Breakdown Volt age

(IE =0)

IC =-10

µA-150

V( BR)CEO

∗ Collector-Emitter

Breakdown Volt age

(IB =0)

IC =-2 mA

-150

V(BR)EBO

∗ Emitter-Base

Breakdown Volt age

(IC =0)

IE =-10

µA-6

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =-10 mA

IB = -1 mA

-0. 1

-0.5

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =-10 mA

IB = -1 mA

-0.74

-0.9

hFE

∗

DC Current G ain

IC =-1 mA

VCE =-10 V

IC =-10 mA

VCE =-10 V

IC =-10

µAVCE = -10 V

Tamb =-55

100

Transit ion F requency

VCE =-10 V

f =20 MHz

IC =-1 mA

IC =-10 mA

MHz

CEBO

Emitt er Base

Capacitance

IE =0

VEB = -0.5 V

f = 1MHz

CCBO

Collect or Base

Capacitance

IE =0

VCB =-5 V

f = 1MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1%

DC Current Gain.

Collector-emitter Saturation Voltage.

BFW43

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