Characteristics

STPS640C

2/9

1

Characteristics

When the diodes 1 and 2 are used simultaneously :

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 1.

Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

40

V

TO-220AB /TO-220FPAB

10

A

DPAK

6

Average forward current

δ = 0.5

TO-220AB

3A

TO-220FPAB

DPAK

Surge non repetitive forward

current

75

A

Repetitive peak reverse current

1

A

1300

W

Storage temperature range

-65 to + 150

° C

Maximum operating junction temperature

150

° C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

Table 2.

Thermal resistances

Symbol

Parameter

Value

Unit

Junction to case

TO-220AB / DPAK

Per diode

Total

5.5

3

°C/W

TO-220FPAB

Per diode

Total

5.5

5.2

Coupling

TO-220AB

0.5

°C/W

TO-220FPAB

3

Table 3.

Static electrical characteristics (per diode)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

(1)

1.

Pulse test: tp = 380 µs,

δ < 2%

Reverse leakage current

100

µA

2

10

mA

VF

(1)

Forward voltage drop

0.63

V

0.84

0.5

0.57

0.67

0.72