STPS640CB datasheet(4/9 Pages) STMICROELECTRONICS

4 / 9 page

Characteristics

STPS640C

4/9

Figure 7.

Relative variation of thermal

transient impedance junction to

case versus pulse duration

(TO-220AB/DPAK)

Figure 8.

Relative variation of thermal

impedance junction to case versus

pulse duration

(TO-220FPAB)

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

Z/R

th(j-c)

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

1E-3

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

Z/R

th(j-c)

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Figure 9.

Reverse leakage current versus

reverse voltage applied (typical

values, per diode)

Figure 10.

Junction capacitance versus

reverse voltage applied (typical

values, per diode)

Figure 11.

Forward voltage drop versus

forward current (maximum values,

per diode)

Figure 12.

Thermal resistance junction to

ambient versus copper surface

under tab (Epoxy printed circuit

board FR4, copper thickness:

35 µm)

1E-5

1E-4

1E-3

1E-2

I (A)

V (V)

T =125°C

T =150°C

T =100°C

T =75°C

100

500

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.1

1.0

10.0

(A)

(V)

T =25°C

T =150°C

(typical values)

(°C/W)

th(j-a)

S(Cu)(cm²)

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