1N91x, 1N4x48, FDLL914, FDLL4x48

www.onsemi.com

2

ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted) (Note 1)

Rating

Symbol

Value

Unit

Maximum Repetitive Reverse Voltage

VRRM

100

V

Average Rectified Forward Current

IO

200

mA

DC Forward Current

IF

300

mA

Recurrent Peak Forward Current

If

400

mA

Non−repetitive Peak Forward Surge Current

Pulse Width = 1.0 s

IFSM

1.0

A

Pulse Width = 1.0 ms

4.0

A

Storage Temperature Range

TSTG

−65 to +200

°C

Operating Junction Temperature Range

TJ

−55 to +175

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. These ratings are limiting values above which the serviceability of the diode may be impaired.

THERMAL CHARACTERISTICS

Parameter

Symbol

Max

Unit

Power Dissipation

PD

500

mW

Thermal Resistance, Junction−to−Ambient

RqJA

300

°C

ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) (Note 2)

Symbol

Parameter

Conditions

Min

Max

Unit

VR

Breakdown Voltage

IR = 100 mA

100

V

IR = 5.0 mA

75

V

VF

Forward Voltage

914B / 4448

IF = 5.0 mA

0.62

0.72

V

916B

IF = 5.0 mA

0.63

0.73

V

914 / 916 / 4148

IF = 10 mA

1.0

V

914A / 916A

IF = 20 mA

1.0

V

916B

IF = 20 mA

1.0

V

914B / 4448

IF = 100 mA

1.0

V

IR

Reverse Leakage

VR = 20 V

0.025

mA

VR = 20 V, TA = 150°C

50

mA

VR = 75 V

5.0

mA

CT

Total Capacitance

916/916A/916B/4448

VR = 0, f = 1.0 MHz

2.0

pF

914/914A/914B/4148

VR = 0, f = 1.0 MHz

4.0

pF

trr

Reverse Recovery Time

IF = 10 mA, VR = 6.0 V (600 mA)

Irr = 1.0 mA, RL = 100 W

4.0

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Non−recurrent square wave PW = 8.3 ms.