IXFN60N80P datasheet(1/3 Pages) ISC

部件名	IXFN60N80P

功能描述	N-Channel MOSFET

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

1 / 3 page

ISFM1350

eq IXFN60N80P

N-Channel MOSFET

www.iscsemi.com

1

DESCRIPTION

· Drain Current -ID= 53A@ TC=25℃

· Drain Source Voltage

-VDSS= 800V(Min)

· Static Drain-Source On-Resistance

-RDS(on) = 140mΩ(Max)@VGS= 10V

APPLICATIONS

· DC-DC converter

· Battery Chargers

· High Speed Power Switching Applications

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

800

V

VGSS

Gate-Source Voltage

±

30

V

ID

Drain Current-continuous@ TC=25℃

53

A

IDM

Pulse Drain Current

150

A

PD

Total Dissipation@TC=25℃

1040

W

TJ

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

Viso

Isolation Voltage

2500

V

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.12

℃

/W

D

G

S

SOT-227

package

类似零件编号 - IXFN60N80P

制造商	部件名	数据表	功能描述
IXYS Corporation	IXFN60N80P	151Kb / 4P	PolarHV HiPerFET Power MOSFET
	IXFN60N80P	232Kb / 6P	Power MOSFET
	IXFN60N80P	232Kb / 6P	Power MOSFET

More results

类似说明 - IXFN60N80P

制造商	部件名	数据表	功能描述
Microsemi Corporation	APT6M100K	263Kb / 4P	N-Channel MOSFET
	APT24M120B2	407Kb / 4P	N-Channel MOSFET
	APT28M120B2	283Kb / 4P	N-Channel MOSFET
	APT34M60B	398Kb / 4P	N-Channel MOSFET
	APT34M120J	273Kb / 4P	N-Channel MOSFET
	APT41M80B2	265Kb / 4P	N-Channel MOSFET
	APT43M60B2	398Kb / 4P	N-Channel MOSFET
	APT58M50J	275Kb / 4P	N-Channel MOSFET
	APT66M60B2	398Kb / 4P	N-Channel MOSFET
KIA Semiconductor Techn...	2302	110Kb / 4P	P-CHANNEL MOSFET N-CHANNEL MOSFET