BSS44 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-amb

Max

200

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE=0)

VCE = -60 V

-0.5

µA

V(BR)CBO

∗

Collector-base

Breakdown Voltage

(IE = 0)

IC = -1 mA

-65

VCEO(sus)

∗

Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = -50 mA

-60

VEBO

∗

Emitter-base Voltage

(IC = 0)

IE =.- 1 mA

-6

VCE(sat)

∗

Collector-Emitter

Saturation Voltage

IC = -0.5 A

IB = -50 mA

IC = - 5 A

IB = -0.5 A

-0.1

-0.4

-1

VBE(sat)

∗

Base-Emitter

Saturation Voltage

IC = -0.5 A

IB = -50 mA

IC = - 5 A

IB = -0.5 A

-0.8

-1.1

-1.6

hFE

∗

DC Current Gain

IC = -0.5 A

VCE = -2 V

IC = -2 A

VCE = -2 V

IC = -5 A

VCE = -2 V

∗

Transition Frequency

IC = -0.5 A

VCE = -5 V

MHz

CCBO

Collector-base

Capacitance

IE = 0

VCB = 10 V

f = 1 MHz

100

ton

Turn-on Time

IC = -0.5 A

VCC = -20 V

IB1 = -IB2 = -50 mA

0.065

µs

toff

Turn-off Time

0.45

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BSS44

2/4

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