BSP43 datasheet(2/4 Pages) STMICROELECTRONICS

2 / 4 page

THERMAL DATA

Rthj-amb

•

Rthj-tab

•

Thermal Resistance Junction-Ambient

Max

Thermal Resistance Junction-Collecor Tab

Max

62.5

oC/W

• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 60 V

Tj = 150

100

µA

V(BR)CBO

Collector-Base

Breakdown Voltage

(IE = 0)

IC = 100

µA

for BSP40/BSP41

for BSP42/BSP43

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = 10 mA

for BSP40/BSP41

for BSP42/BSP43

V(BR)CES

Collector-Emitter

Breakdown Voltage

(VBE = 0)

IC = 10

µA

for BSP40/BSP41

for BSP42/BSP43

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IC = 10

µA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 150 mA

IB = 15 mA

IC = 500 mA

IB = 50 mA

0.25

0.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 150 mA

IB = 15 mA

IC = 500 mA

IB = 50 mA

1.2

hFE

∗

DC Current Gain

for BSP40/BSP41

IC = 100

µA

VCE = 5 V

IC = 100 mA

VCE = 5 V

IC = 500 mA

VCE = 5 V

for BSP42/BSP43

IC = 100

µA

VCE = 5 V

IC = 100 mA

VCE = 5 V

IC = 500 mA

VCE = 5 V

100

120

300

Transition Frequency

IC = 50 mA VCE = 10 V f = 35 MHz

100

MHz

CCBO

Collector-Base

Capacitance

IE = 0

VCB = 10 V

f = 1 MHz

CEBO

Emitter-Base

Capacitance

IC = 0

VEB = 0.5 V

f = 1 MHz

ton

Turn-on Time

IC = 100 mA

IB1 = -IB2 = 5 mA

250

toff

Turn-on Time

1000

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %

BSP40/41/42/43

2/4

BSP43 数据表(PDF) 2 Page - STMicroelectronics

BSP43 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4

数据表下载

链接网址

BSP43 数据表(PDF) 2 Page - STMicroelectronics

BSP43 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4

数据表 下载

链接网址

数据表下载