THERMAL DATA

•

•

Thermal Resistance Junction-Ambient

Max

Thermal Resistance Junction-Substrat e

Max

620

400

• Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

Collect or Cut-off

for SO2369/SO 2369A

for BSV52

for BSV52

400

100

5

nA

nA

µA

Collect or Cut-off

for SO2369A

400

nA

∗ Collector-Emitter

Breakdown Volt age

µA

for SO2369/SO 2369A

for BSV52

40

20

V

V

∗ Collector-Emitter

Breakdown Volt age

for SO2369/SO 2369A

for BSV52

15

12

V

V

∗ Collector-Base

Breakdown Volt age

µA

for SO2369/SO 2369A

for BSV52

40

20

V

V

Emitt er-Base

Breakdown Volt age

µA

for SO2369/SO 2369A

for BSV52

4. 5

5

V

V

∗ Collector-Emitter

Saturat ion Voltage

for BSV52

for SO2369A

for BSV52

for SO2369 BSV52

for BSV52

for SO2369A

0.3

0.2

0.25

0.25

0.4

0.5

V

V

V

V

V

V

∗ Collector-Base

Saturat ion Voltage

for SO2369A

for BSV52

for SO2369A

0. 7

0.85

1.15

1.2

1.6

V

V

V

V

∗

DC Current G ain

f or BSV52

for All typ es

for SO2369A

for BSV52

for SO2369A

for SO2369

25

40

40

30

25

20

20

120

120

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

BSV52/SO2369/SO2369A

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