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SID1182K 数据表(PDF) 21 Page - Power Integrations, Inc.

部件名 SID1182K
功能描述  Up to 8 A Single Channel IGBT/MOSFET Gate Driver
PDF  24 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  POWERINT [Power Integrations, Inc.]
网页  http://www.powerint.com
标志 POWERINT - Power Integrations, Inc.

SID1182K 数据表(HTML) 21 Page - Power Integrations, Inc.

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Rev. H 09/19
21
SID11x2K
MSL Table
Part Number
MSL Rating
SID11x2K
3
ESD and Latch-Up Table
IEC 60664-1 Rating Table
Electrical Characteristics (EMI) Table
Test
Conditions
Results
Latch-up at 125 °C
JESD78D
> ±100 mA or > 1.5 × V
MAX on all pins
Human Body Model ESD
JESD22-A114F
> ±2000 V on all pins
Charged Device Model ESD
JESD22-C101
> ±500 V on all pins
Machine Model ESD
JESD22-A115C
> ±200 V on all pins
Parameter
Conditions
Specifications
Basic Isolation Group
Material Group
I
Installation Classification
Rated mains voltage ≤ 150 V
RMS
I - IV
Rated mains voltage ≤ 300 V
RMS
I - IV
Rated mains voltage ≤ 600 V
RMS
I - IV
Rated mains voltage ≤ 1000 V
RMS
I - III
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Common-Mode
Transient Immunity,
Logic High
CM
H
Typical values measured according to Figures
33, 34. Maximum values are design values
assuming trapezoid waveforms
-35 / 50
-100 / 100
kV/µs
Common-Mode
Transient Immunity,
Logic Low
CM
L
Typical values measured according to Figures
33, 34. Maximum values are design values
assuming trapezoid waveforms
-35 / 50
-100 / 100
kV/µs
Variable Magnetic Field
Immunity
H
HPEAK
See Note 15
1000
A/m
H
LPEAK
See Note 15
1000
Figure 33. Applied Common Mode Pulses for Generating Negative dv/dt.
Figure 34. Applied Common Mode Pulses for Generating Positive dv/dt.



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