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BSX20 数据表(PDF) 2 Page - STMicroelectronics

部件名 BSX20
功能描述  HIGH SPEED SATURATED SWITCHES
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

BSX20 数据表(HTML) 2 Page - STMicroelectronics

  BSX20 Datasheet HTML 1Page - STMicroelectronics BSX20 Datasheet HTML 2Page - STMicroelectronics BSX20 Datasheet HTML 3Page - STMicroelectronics BSX20 Datasheet HTML 4Page - STMicroelectronics BSX20 Datasheet HTML 5Page - STMicroelectronics BSX20 Datasheet HTML 6Page - STMicroelectronics  
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THERMAL DATA
Rthj-ca se
Rthj- amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
146
486
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ICBO
Collect or Cut-off
Current (IE =0)
VCB =20 V
VCB =20 V
Tamb =150
oC
0.4
30
µA
µA
ICES
Collect or Cut-off
Current (VBE =0)
VCE =15 V
Tamb =55
oC
VCE =40 V
0.4
1
µA
µA
ICEX
Collect or Cut-off
Current (VBE =-3V)
VCE =15 V
Tamb =55
oC0.6
µA
IBEX
Base Cut-off Current
(VBE =-3V)
VCE =15 V
Tamb =55
oC0.6
µA
IEBO
Emitt er Cut-off Current
(IC =0)
VEB = 4.5 V
10
µA
VCER( sus)
∗ Collector-Emitter
Sustaining Voltage
(RBE =10
Ω)
IC =10 mA
20
V
V( BR)CEO
∗ Collector-Emitter
Breakdown Volt age
(IB =0)
IC =10 mA
15
V
VCE(sat)
∗ Collector-Emitter
Saturat ion Voltage
IC =10 mA
IB =1 mA
IC =100 mA
IB =10 mA
IC =10 mA
IB =0.3 mA
0.25
0.6
0.3
V
V
V
VBE(s at)
∗ Base-Emitter
Saturat ion Voltage
IC =10 mA
IB =1 mA
IC =100 mA
IB =10 mA
0. 7
0.85
1.5
V
V
VBE(on)
∗ Base-Emitter On
Voltage
IC =30
µAVCE =20 V
Tamb = 100
oC
350
mV
hFE
∗
DC Current G ain
IC =10 mA
VCE =1 V
IC =100 mA
VCE =2 V
IC =10 mA
VCE =1 V
Tamb =-55
oC
40
20
20
60
fT
Transit ion F requency
IC =10 mA
VCE = 10 V
500
600
MHz
CCBO
Collect or Base
Capacitance
IE =0
VCB =5 V
4
pF
CEBO
Emitt er Base
Capacitance
IC =0
VEB =1 V
4.5
pF
ts
∗∗
St orage Time
VCC =10 V
IC =10 mA
IB1 =-IB2 =10 mA
613
ns
ton
∗∗
Turn-on T ime
VCC =3 V
IC =10 mA
IB1 =3 mA
VCC =6 V
IC =100 mA
IB1 =40 mA
12
7
ns
ns
toff
∗∗
Turn-off T ime
VCC =3 V
IC =10 mA
IB1 =3 mA
IB2 =-1.5 mA
VCC =6 V
IC =100 mA
IB1 =40 mA
IB2 =-20 mA
18
21
ns
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1%
∗∗ See test circuit
BSX20
2/6



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