Page <2>

V1.0

25/09/19

Complementary Power Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min.

Max.

Unit

OFF Characteristics

Collector-Emitter Sustaining Voltage (1)

IC = 30mA, IB = 0

VCEO(SUS)

60

-

V

Collector Cut off Current

VCE = 70V, RBE= 100Ω

ICER

-

1

mA

Collector Cut off Current

VCE = 30V, IB = 0

ICEO

-

0.7

Collector Cut off Current

VCE = 100V, VBE(off) = 1.5V

ICEV

-

5

Emitter Cut off Current

VEB = 7V, IC = 0

IEBO

-

ON Characteristics (1)

DC Current Gain

IC = 4A, VCE = 4V

IC = 10A, VCE = 4V

hFE

20

5

100

-

Collector-Emitter Saturation Voltage

IC = 4A, IB = 0.4A

IC = 10A, IB = 3.3A

VCE(sat)

-

1.1

3

V

Base-Emitter On Voltage

IC = 4A, VCE = 4V

VBE(on)

-

1.8

Dynamic Characteristics

Current Gain Bandwidth Product

IC = 500mA, VCE = 10V, f = 1MHz

fT

2.5

-

MHz

Small-Signal Current Gain

IC = 1A, VCE = 4V, f = 1kHz

hfe

15

-

-

(1) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤2%

(2) fT = |hfe| • ftest