Symbol

Test Conditions

Quadrant

Suffix

Unit

IGT

VD=12V

(DC)

RL=33Ω

Tj=25

°C

I-II-III-IV

MIN

5

mA

I-II-III

MAX

50

IV

MAX

100

VGT

VD=12V

(DC)

RL=33Ω

Tj=25

°C

I-II-III-IV

MAX

1.3

V

VGD

VD=VDRM RL=3.3kΩ

Tj=125

°C

I-II-III-IV

MIN

0.2

V

IL

IG=1.2 IGT

Tj=25

°C

I-III-IV

MAX

70

mA

II

150

IH *IT= 500mA gate open

Tj=25

°C

MAX

50

mA

VTM *ITM= 35A tp= 380µs

Tj=25

°C

MAX

1.6

V

IDRM

IRRM

VDRM Rated

VRRM Rated

Tj=25

°CMAX

5

µA

Tj=125

°CMAX

2

mA

dV/dt *

Linear slope up to VD=67%VDRM

gate open

Tj=125

°C

MIN

750

V/

µs

(dV/dt)c *

(dI/dt)c = 11.1A/ms

Tj=125

°C

MIN

10

V/

µs

ELECTRICAL CHARACTERISTICS

* For either polarity of electrode A2 voltage with reference to electrode A1.

PG (AV) = 1W

PGM = 10W (tp = 20 µs)

IGM = 4A (tp = 20 µs)

VGM = 16V (tp = 20 µs).

GATE CHARACTERISTICS (maximum values)

Symbol

Parameter

Value

Unit

Rth (j-a)

Junction to ambient

60

°C/W

Rth (j-c) DC Junction to case for DC

1.5

°C/W

Rth (j-c) AC Junction to case for 360

° conduction angle ( F= 50 Hz)

1.1

°C/W

THERMAL RESISTANCES

0

5

10

15

20

25

0

5

10

15

20

25

30

35

P(W)

IT(rms)(A)

180°

α

α

α = 180°

α = 120°

α = 90°

α = 30°

α = 60°

Fig.

1:

Maximum

power

dissipation

versus

RMS

on-state current.

0

20

40

60

80

100

120

140

0

5

10

15

20

25

30

35

P(W)

Tcase (°C)

90

125

100

110

120

Tamb(°C)

α = 180°

Rth=0°C/W

Rth=1°C/W

Rth=2°C/W

Rth=3°C/W

Fig. 2: Correlation between maximum power dissipation

and

maximum

allowable

temperatures

(Tamb and

Tcase) for different thermal resistances heatsink +

contact.

BTB24 B

2/4