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LPV802 数据表(PDF) 4 Page - Texas Instruments |
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LPV802 数据表(HTML) 4 Page - Texas Instruments |
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4 / 30 page ![]() 4 LPV801, LPV802 SNOSCZ3B – AUGUST 2016 – REVISED NOVEMBER 2016 www.ti.com Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Not to exceed -0.3V or +6.0V on ANY pin, referred to V- (3) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should be current-limited to 10 mA or less. (4) Short-circuit to Vs/2, one amplifer per package. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. 6 Specifications 6.1 Absolute Maximum Ratings Over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply voltage, Vs = (V+) - (V-) –0.3 6 V Input pins Voltage (2) (3) Common mode (V-) - 0.3 (V+) + 0.3 V Differential (V-) - 0.3 (V+) + 0.3 V Input pins Current -10 10 mA Output short current (4) Continuous Continuous Operating temperature –40 125 °C Storage temperature, Tstg –65 150 °C Junction temperature 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions. Pins listed as ±2000 V may actually have higher performance. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions. Pins listed as ±750 V may actually have higher performance. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 V Charged-device model (CDM), per JEDEC specification JESD22- C101(2) ±250 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT Supply voltage (V+ – V–) 1.6 5.5 V Specified temperature -40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) LPV801 DBV (SOT-23) 5 PINS LPV802 DGK (VSSOP) 8 PINS UNIT θJA Junction-to-ambient thermal resistance 177.4 184.2 ºC/W θJCtop Junction-to-case (top) thermal resistance 133.9 75.3 θJB Junction-to-board thermal resistance 36.3 105.5 ψJT Junction-to-top characterization parameter 23.6 13.5 ψJB Junction-to-board characterization parameter 35.7 103.9 |
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