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LPV811DBVT 数据表(PDF) 20 Page - Texas Instruments |
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LPV811DBVT 数据表(HTML) 20 Page - Texas Instruments |
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20 / 31 page ![]() 20 LPV811, LPV812 SNOSD33B – NOVEMBER 2016 – REVISED NOVEMBER 2016 www.ti.com Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 11.6 Trademarks (continued) All other trademarks are the property of their respective owners. 11.7 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.8 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. |
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