BU406 datasheet(2/4 Pages) STMICROELECTRONICS

部件名	BU406

功能描述	SILICON NPN SWITCHING TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

2 / 4 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

2.08

oC/W

Rthj-amb

Thermal Resistance Junction-ambient

Max

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE =400 V

VCE =250 V

Tcase = 150

o C

VCE =250 V

100

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 6 V

VCE(sat)

∗ Collector-emitter

Saturation Voltage

IC = 5 A

IB = 0.5 A

VBE(sat)

∗ Base-emitter

Saturation Voltage

IC = 5 A

IB = 0.5 A

1.2

Transition-Frequency

IC = 0.5 A

VCE = 10V

MHz

toff

∗∗

Turn-off Time

IC = 5 A

IBend = 0.5 A

0.75

µs

Is/b

Second Breakdown

Collector Current

VCE = 40 V

t = 10 ms

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

BU406

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