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BU505 数据表(PDF) 2 Page - STMicroelectronics |
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BU505 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.67 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = VCES VCE = VCES Tcase = 125 oC 0.15 1 mA mA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 1 mA VCEO(sus) Collector-emitter Sustaining Voltage IC = 100 mA L = 25mH 700 V VCE(sat) ∗ Collector-emitter Saturation Voltage IC = 2 A IB = 0.9 A 5 V VBE(sat) ∗ Base-emitter Saturation Voltage IC = 2 A IB = 0.9 A 1.3 V Is/b Second Breakdown Current VCE = 120 V t = 200 µs2 A ts Storage Time VClamp = 250V IC = 2 A IB1 = 0.7 A Vbe(off) = -5V Rbb = 0 L = 200 µH 2 350 µs ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. BU505 2/4 |
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