BU806 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

2.08

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

for BU807

VCE = 330 V

for BU806

VCE = 400 V

100

µA

ICEV

Collector Cut-off

Current (VBE = -6V)

for BU807

VCE = 330 V

for BU806

VCE = 400 V

100

µA

IEBO

Emitter Cut-off

Current (IC = 0)

VEB = 6 V

3.5

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

for BU807

for BU806

150

200

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 5A

IB = 50mA

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 5A

IB = 50mA

2.4

∗

Damper Diode

Forward Voltage

IF = 4A

ton

toff

RESISTIVE LOAD

Turn-on Time

Turn-off Time

Storage Time

Fall Time

IC = 5 A

VCC = 100 V

IB1 = 50 mA

IB2 = -500 mA

0.35

0.4

0.55

0.2

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle < 1.5 %

BU806 / BU807

2/4

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