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STM32MP151AAB3T 数据表(PDF) 150 Page - STMicroelectronics

部件名 STM32MP151AAB3T
功能描述  Arm® Cortex®-A7 650 MHz Cortex®-M4 MPU, TFT, 35 comm. interfaces, 25 timers, adv. analog
PDF  245 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32MP151AAB3T 数据表(HTML) 150 Page - STMicroelectronics

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Electrical characteristics
STM32MP151A
150/245
DS12500 Rev 1
4 MHz low-power internal RC oscillator (CSI)
40 kHz low-speed internal (LSI) RC oscillator
1. Guaranteed by design unless otherwise specified.
Table 34. CSI oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fCSI
CSI frequency
VDD = 3.3 V, TJ = 30 °C TBD(2)
4TBD(2)
MHz
TRIM
Trimming step
Trimming code is not a
multiple of 16
-0.85
TBD
%
Trimming code is a
multiple of 16
TBD
-3.5
TBD
DuCy(CSI)
Duty Cycle
-
TBD
54
TBD
%
∆VDD (CSI) +
∆TEMP (CSI)
CSI oscillator frequency drift over
VDD & drift over temperature
VDD = 1.71 to 3.6 V
TJ = 0 to 85 °C
TBD
±1.43(3)
TBD
%
tsu(CSI)
CSI oscillator startup time
-
-
2
TBD
µs
tstab(CSI)
CSI oscillator stabilization time
(to reach ±5% of fCSI)
TJ = 0 to 85 °C
-
5
TBD
cycle
IDD(CSI)
CSI oscillator power consumption
-
-
30
TBD
µA
1. Guaranteed by design.
2. Guaranteed by test in production.
3. Guaranteed by characterization results.
Table 35. LSI oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fLSI
LSI frequency
TJ = 25 °C,
VDD = 3.3 V
(after calibration)
TBD
32
TBD
kHz
TJ = 0 to 110 °C,
VDD = 1.71 to 3.6 V
TBD
32
TBD
TJ = -40 to 110 °C,
VDD = 1.71 to 3.6 V
TBD
32
TBD
TJ = -40 to 125 °C,
VDD = 1.71 to 3.6 V (after
calibration)
TBD
32
TBD
tsu(LSI)(1)
LSI oscillator startup time (Time
between Enable rising and First
output clock edge.)
--
64
TBD
µs
tstab(LSI)(1)
LSI oscillator stabilization time
(5% of final value)
--
110
TBD
IDD(LSI)(1)
LSI oscillator power
consumption
--
120
TBD
nA



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