STM32MP151AAB3T datasheet(149/245 Pages) STMICROELECTRONICS

149 / 245 page

DS12500 Rev 1

149/245

STM32MP151A

Electrical characteristics

228

Figure 19. Typical application with a 32.768 kHz crystal

1. An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one.

6.3.9

Internal clock source characteristics

The parameters given in Table 33, Table 34 and Table 35 are derived from tests performed

under ambient temperature and VDD supply voltage conditions summarized in Table 13:

General operating conditions.

64 MHz high-speed internal RC oscillator (HSI)

ai17531b

OSC32_OU T

OSC32_IN

fLSE

CL1

STM32

32.768 kH z

resonator

Resonator with

integrated capacitors

Bias

controlled

gain

CL2

Table 33. HSI oscillator characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

HSI frequency

VDD = 3.3 V, TJ = 30 °C

TBD

MHz

TRIM

HSI user trimming step

Trimming is not a multiple

of 32

TBD

0.33

TBD

Trimming is 128, 256 and

384

TBD

-2.43

TBD

Trimming is 64, 192, 320

and 448

TBD

-0.70

TBD

Other trimming are a

multiple of 32 (not

including multiple of 64

and 128)

TBD

-0.30

TBD

DuCy(HSI)

Duty Cycle

∆VDD (HSI)

HSI oscillator frequency drift over

VDD (reference is 3.3 V)

VDD = 1.71 to 3.6 V

-0.12

0.03

∆TEMP (HSI)

HSI oscillator frequency drift over

temperature (reference is 64 MHz)

With Temperature Trimming

TJ = -20 to 110 °C

TBD

TJ = -40 to 125 °C

-2.62

2.08

∆TEMP_NOT

RIM (HSI)

HSI oscillator frequency drift over

temperature (reference is 64 MHz)

Without Temperature Trimming

TJ = -20 to 110 °C

TBD

T J =-40 to 125 °C

-4

2.5

tsu(HSI)

HSI oscillator start-up time (Time

between Enable rising and First

output clock edge.)

1.47

TBD

µs

tstab(HSI)

HSI oscillator stabilization time

at 1% of target frequency

TBD

µs

IDD(HSI)

HSI oscillator power consumption

300

TBD

µA

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