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BU931 数据表(PDF) 2 Page - STMicroelectronics |
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BU931 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 7 page ![]() THERMAL DATA TO-3 TO-218 Rthj-ca se Thermal Resistance Junction-case Max 1 1.1 oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ICES Collect or Cut-off Current (VBE =0) VCE =500 V VCE =500 V Tj = 125 oC 100 0.5 µA mA ICEO Collect or Cut-off Current (IB =0) VCE =450 V VCE =450 V Tj = 125 oC 100 0.5 µA mA IEBO Emitt er Cut-off Current (IC =0) VEB =5 V 20 mA VCEO(sus ) ∗ Collector-Emitter Sustaining Voltage (IB =0) IC = 100 mA L = 10 mH VClamp = 400 V (See F ig.4) 400 V VCE(sat) ∗ Collector-Emitter Saturat ion Voltage IC =7 A IB =70 mA IC =8 A IB =100 mA IC =10 A IB = 250 mA 1.6 1.8 1.8 V V V VBE(s at) ∗ Base-Emitter Saturat ion Voltage IC =7 A IB =70 mA IC =8 A IB =100 mA IC =10 A IB = 250 mA 2.2 2.4 2.5 V V V hFE ∗ DC Current G ain IC =5 A VCE = 10 V 300 VF Diode Forward Volt age IF =10 A 2.5 V Funct ional Test (see f ig. 1) VCC =24 V Vcl amp = 400 V L= 7mH 8A ts tf INDUCTIVE LOAD St orage Time Fall T ime (see f ig. 3) VCC =12 V Vcl amp = 300 V L= 7mH IC =7 A IB =70 mA VBE =0 RBE =47 Ω 15 0.5 µs µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area DC Current Gain BU931 / BU931P 2/7 |
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