BU941Z datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

THERMAL DATA

TO-3

TO-218

ISOW AT T218

Rthj-ca se

Thermal Resistance Junct ion-case Max

0.97

2.3

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICEO

Collector Cut -of f

Current (IB =0)

VCE =300 V

Tj =125

100

0.5

µA

IEBO

Emitt er Cut -of f Current

(IC =0)

VEB =5 V

VCL

∗

Clamping Voltage

IC = 100 mA

350

500

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC =8 A

IB =100 mA

IC =10 A

IB =250 mA

IC =12 A

IB =300 mA

1.8

VBE(s at)

∗ Base-Emitter

Saturation Voltage

IC =8 A

IB =100 mA

IC =10 A

IB =250 mA

IC =12 A

IB =300 mA

2.2

2.5

2.7

hFE

∗

DC Current Gain

IC =5 A

VCE = 10 V

300

Diode F orward Voltage

IF =10 A

2.5

Funct ional T est

(see fig. 1)

VCC =24 V

L= 7 mH

INDUCTIVE LO AD

St orage Time

Fall Time

(see fig. 3)

VCC =12 V

L= 7 mH

VBE =0

RBE =47

Ω

Vcla mp =300 V

IC =7 A

IB =70 mA

0.5

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

DC Current Gain

BU941Z/BU941ZP/BU941ZPFI

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