CC2591

SWRS070B – MARCH 2008 – REVISED SEPTEMBER 2014

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4

Specifications

4.1

Absolute Maximum Ratings

(1) (2)

Under no circumstances must the absolute maximum ratings be violated. Stress exceeding one or more of the limiting values

may cause permanent damage to the device.

PARAMETER

VALUE

UNIT

Supply voltage

All supply pins must have the same voltage

–0.3 to 3.6

V

Voltage on any digital pin

–0.3 to VDD + 0.3, max 3.6

Input RF level

10

dBm

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values are with respect to VSS, unless otherwise noted.

4.2

Handling Ratings

MIN

MAX

UNIT

Tstg

Storage temperature range

–50

150

°C

Human Body Model (HBM), per ANSI/ESDA/JEDEC

–600

600

V

JS001(1)

Electrostatic discharge (ESD)

VESD

performance:

Charged Device Model (CDM),

–500

500

V

per JESD22-C101(2)

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

4.3

Recommended Operating Conditions

The operating conditions for CC2591 are listed below.

PARAMETER

MIN

MAX

UNIT

Ambient temperature range

–40

85

°C

Operating supply voltage

2

3.6

V

Operating frequency range

2400

2483.5

MHz

4.4

Electrical Characteristics

TC = 25°C, VDD = 3 V , fRF= 2440 MHz (unless otherwise noted). Measured on CC2591EM reference design including external

matching components.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Receive current, High-Gain Mode

HGM = 1

3.4

4

Receive current, Low-Gain Mode

HGM = 0

1.7

2

mA

Transmit current

PIN = 0.5 dBm

112

Transmit current

No input signal

40

50

Power-down current

EN = PAEN = 0

0.1

0.3

μA

High-input level (control pins)

EN, PAEN, HGM, RXTX

1.3

VDD

V

Low-input level (control pins)

EN, PAEN, HGM, RXTX

0.3

Power down - Receive mode switching

12

μs

time

Power down - Transmit mode switching

1

μs

time

RF Receive

Gain, High-Gain Mode

HGM = 1

11

dB

Gain, Low-Gain Mode

HGM = 0

1

dB

Gain variation, 2400 – 2483.5 MHz, High-

HGM = 1

1.3

dB

Gain Mode

Gain variation, 2.0 V – 3.6 V, High-Gain

HGM = 1

1.5

dB

Mode

6

Specifications

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