BUL38D datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junct ion-Case

Max

Thermal Resistance Junct ion-Ambient

Max

1.56

62. 5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collector Cut -of f

Current (VBE =0)

VCE =800 V

Tj =125

100

500

µA

ICEO

Collector Cut -of f

Current (IB =0)

VCE = 450 V

250

µA

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

(IB =0)

IC = 100 mA

L = 25 mH

450

VEBO

Emitt er-Base Voltage

(IC =0)

IE =10 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC =1 A

IB =0.2 A

IC =2 A

IB =0.4 A

IC =3 A

IB =0.75 A

0.5

0.7

1.1

VBE(s at)

∗ Base-Emitter

Saturation Voltage

IC =1 A

IB =0.2 A

IC =2 A

IB =0.4 A

1.1

1.2

hFE

∗

DC Current Gain

IC =10 mA

VCE =5 V

IC =0.5 A

VCE =5 V

IC =2 A

VCE =5 V

Group A

Group B

RESI STIVE LO AD

St orage Time

Fall Time

IC =2. 5 A

VCC =150 V

IB1 =-IB2 =0.5 A

tp =30

µs

1. 0

2.2

0.8

µs

INDUCTIVE LO AD

St orage Time

Fall Time

IC =2 A

IB1 =0.4 A

VBE(off) =-5 V

RBB =0

Ω

VCL = 250 V

L = 200

µH

1.8

100

µs

INDUCTIVE LO AD

St orage Time

Fall Time

IC =2 A

IB1 =0. 4 A

VBE(off) =-5 V

RBB =0

Ω

VCL = 250 V

L = 200

µH

Tj =125

1.3

100

µs

Diode F orward Voltage

IC =2 A

1.5

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

The product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups

according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.

BUL38D

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