CSD18503KCS datasheet(3/13 Pages) TI2

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4 Specifications

4.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0V, ID = 250μA

IDSS

Drain-to-Source Leakage Current

VGS = 0V, VDS = 32V

μA

IGSS

Gate-to-Source Leakage Current

VDS = 0V, VGS = 20V

100

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, ID = 250μA

1.5

1.9

2.3

RDS(on)

Drain-to-Source On-Resistance

VGS = 4.5V, ID = 75A

5.4

6.8

mΩ

VGS = 10V, ID = 75A

3.6

4.5

mΩ

gfs

Transconductance

VDS = 20V, ID = 75A

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VGS = 0V, VDS = 20V, ƒ = 1MHz

2500

3150

Coss

Output Capacitance

480

600

Crss

Reverse Transfer Capacitance

Series Gate Resistance

1.4

2.8

Ω

Gate Charge Total (4.5V)

VDS = 20V, ID = 75A

Gate Charge Total (10V)

Qgd

Gate Charge Gate-to-Drain

4.6

Qgs

Gate Charge Gate-to-Source

7.7

Qg(th)

Gate Charge at Vth

4.7

Qoss

Output Charge

VDS = 20V, VGS = 0V

td(on)

Turn On Delay Time

VDS = 20V, VGS = 10V,

IDS = 75A, RG = 0Ω

5.7

Rise Time

5.3

td(off)

Turn Off Delay Time

Fall Time

6.8

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

ISD = 75A, VGS = 0V

0.8

Qrr

Reverse Recovery Charge

VDS= 20V, IF = 75A,

di/dt = 300A/μs

trr

Reverse Recovery Time

4.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJC

Junction-to-Case Thermal Resistance

0.8

°C/W

RθJA

Junction-to-Ambient Thermal Resistance

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CSD18503KCS

SLPS368B – SEPTEMBER 2012 – REVISED MARCH 2024

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