CSD19503KCS datasheet(3/13 Pages) TI2

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4 Specifications

4.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0V, ID = 250μA

IDSS

Drain-to-Source Leakage Current

VGS = 0V, VDS = 64V

μA

IGSS

Gate-to-Source Leakage Current

VDS = 0V, VGS = 20V

100

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, ID = 250μA

2.2

2.8

3.4

RDS(on)

Drain-to-Source On-Resistance

VGS = 6V, ID = 60A

8.8

10.9

mΩ

VGS = 10V, ID = 60A

7.6

9.2

mΩ

gfs

Transconductance

VDS = 8V, ID = 60A

110

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VGS = 0V, VDS = 40V, ƒ = 1MHz

2100

2730

Coss

Output Capacitance

555

721

Crss

Reverse Transfer Capacitance

8.5

11.1

Series Gate Resistance

1.2

2.4

Ω

Gate Charge Total (10V)

VDS = 40V, ID = 60A

Qgd

Gate Charge Gate-to-Drain

5.4

Qgs

Gate Charge Gate-to-Source

9.8

Qg(th)

Gate Charge at Vth

6.1

Qoss

Output Charge

VDS = 40V, VGS = 0V

td(on)

Turn On Delay Time

VDS = 40V, VGS = 10V,

IDS = 60A, RG = 0Ω

Rise Time

td(off)

Turn Off Delay Time

Fall Time

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

ISD = 60A, VGS = 0V

0.9

1.1

Qrr

Reverse Recovery Charge

VDS= 40V, IF = 60A,

di/dt = 300A/μs

119

trr

Reverse Recovery Time

4.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJC

Junction-to-Case Thermal Resistance

0.8

°C/W

RθJA

Junction-to-Ambient Thermal Resistance

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CSD19503KCS

SLPS479B – DECEMBER 2013 – REVISED APRIL 2024

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