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ESDS312DBVR 数据表(PDF) 6 Page - Texas Instruments

部件名 ESDS312DBVR
功能描述  ESDS31x Data-Line Surge and ESD Protection Diode Array
PDF  24 Pages
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制造商  TI2 [Texas Instruments]
网页  https://www.ti.com
标志 TI2 - Texas Instruments

ESDS312DBVR 数据表(HTML) 6 Page - Texas Instruments

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5.7 Typical Characteristics
Peak Pulse Cuurent (A)
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
D001
Figure 5-1. Clamping Voltage vs. Peak Pulse
Current (tp= 8/20µs), Any IO Pin to GND
Peak Pulse Current (A)
0
5
10
15
20
25
30
0
1
2
3
4
5
D002
Figure 5-2. Clamping Voltage vs. Peak Pulse
Current (tp= 8/20µs), GND to Any IO Pin
Time (Ps)
0
20
40
60
80
100
120
140
160
180
200
-2.5
-20
0
0
2.5
20
5
40
7.5
60
10
80
12.5
100
15
120
17.5
140
20
160
22.5
180
25
200
27.5
220
D003
D003
D003
D003
Voltage (V)
Current (A)
Power (W)
Figure 5-3. Surge Current, Clamping Voltage and
Power Curve (tp = 8/20µs), Any IO Pin to GND
D004_DC_Plot.grf
Voltage (V)
-1
0
1
2
3
4
5
6
-0.0012
-0.001
-0.0008
-0.0006
-0.0004
-0.0002
0
0.0002
0.0004
0.0006
0.0008
0.001
D004
Figure 5-4. DC I-V Curve
D005_TLP_Pos.grf
Voltage (V)
0
1
2
3
4
5
6
7
-4
0
4
8
12
16
20
24
28
32
D005
Figure 5-5. TLP I-V Curve, IO to GND, tp = 100ns
D006_TLP_Neg.grf
Voltage (V)
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
-32
-28
-24
-20
-16
-12
-8
-4
0
4
D006
Figure 5-6. TLP I-V Curve, IO to GND Negative,
tp=100ns
ESDS311, ESDS312, ESDS314
SLVSEG9C – MAY 2018 – REVISED FEBRUARY 2024
www.ti.com
6
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Copyright © 2024 Texas Instruments Incorporated
Product Folder Links: ESDS311 ESDS312 ESDS314



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