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ESDS312DBVR.B 数据表(PDF) 12 Page - Texas Instruments

部件名 ESDS312DBVR.B
功能描述  ESDS31x Data-Line Surge and ESD Protection Diode Array
PDF  24 Pages
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制造商  TI2 [Texas Instruments]
网页  https://www.ti.com
标志 TI2 - Texas Instruments

ESDS312DBVR.B 数据表(HTML) 12 Page - Texas Instruments

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8 Device and Documentation Support
8.1 Documentation Support
8.1.1 Related Documentation
For related documentation, see the following:
• Texas Instruments, TI's IEC 61000-4-x Testing application note
• Texas Instruments, ESD Layout Guide user's guide
• Texas Instruments, ESD Protection Diodes EVM user's guide
• Texas Instruments, Generic ESD Evaluation Module user's guide
• Texas Instruments, Reading and Understanding an ESD Protection Data Sheet user's guide
8.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Notifications to register and receive a weekly digest of any product information that has changed. For change
details, review the revision history included in any revised document.
8.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
8.4 Trademarks
Ethernet™ is a trademark of Xerox Corporation.
USB™ is a trademark of USB Implementers Forum.
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
8.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
8.6 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
9 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision B (September 2018) to Revision C (February 2024)
Page
• Updated the numbering format for tables, figures, and cross-references throughout the document ................ 1
• Added the ESDS311 device to the data sheet................................................................................................... 1
Changes from Revision A (July 2018) to Revision B (September 2018)
Page
• Changed from Advanced Information to Production Data ................................................................................. 1
ESDS311, ESDS312, ESDS314
SLVSEG9C – MAY 2018 – REVISED FEBRUARY 2024
www.ti.com
12
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Copyright © 2024 Texas Instruments Incorporated
Product Folder Links: ESDS311 ESDS312 ESDS314



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