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BUL810 数据表(PDF) 2 Page - STMicroelectronics

部件名 BUL810
功能描述  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

BUL810 数据表(HTML) 2 Page - STMicroelectronics

  BUL810 Datasheet HTML 1Page - STMicroelectronics BUL810 Datasheet HTML 2Page - STMicroelectronics BUL810 Datasheet HTML 3Page - STMicroelectronics BUL810 Datasheet HTML 4Page - STMicroelectronics BUL810 Datasheet HTML 5Page - STMicroelectronics BUL810 Datasheet HTML 6Page - STMicroelectronics  
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THERMAL DATA
Rthj-ca se
Rthj- amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
1
30
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ICES
Collect or Cut-off
Current (VBE =0)
VCE =1000 V
VCE =1000 V
Tj = 125
oC
100
500
µA
µA
ICEO
Collect or Cut-off
Current (IB =0)
VCE =450 V
250
µA
VCEO(sus)
Collect or-Emitter
Sustaining Voltage
IC = 100 mA
L = 25 mH
450
V
VEBO
Emitt er-Base Voltage
(IC =0)
IE =10 mA
9
V
VCE(sat)
∗ Collector-Emitter
Saturat ion Voltage
IC =5 A
IB =1 A
IC =8 A
IB =1. 6 A
IC =12 A
IB =2.4 A
1
1.5
5
V
V
V
VBE(s at)
∗ Base-Emitter
Saturat ion Voltage
IC =5 A
IB =1 A
IC =8 A
IB =1. 6 A
1.3
1.6
V
V
hFE
∗
DC Current G ain
IC =5 A
VCE =5 V
IC =10 mA
VCE =5 V
10
10
40
ts
tf
INDUCTIVE LOAD
St orage Time
Fall T ime
IC =8 A
IB1 =1.6 A
VBE(off) =-5 V
RBB =0.4
Ω
VCL = 350 V
L = 200
µH
1.5
55
2.3
110
µs
ns
ts
tf
INDUCTIVE LOAD
St orage Time
Fall T ime
IC =8 A
IB1 =1.6 A
VBE(off) =-5 V
RBB =0.4
Ω
VCL = 350 V
L = 200
µH
Tj = 100
oC
1.9
80
µs
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
BUL810
2/6



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