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MOC211-M... 数据表(PDF) 3 Page - ON Semiconductor

部件名 MOC211-M...
功能描述  8-pin SOIC Single-Channel Phototransistor Output Optocoupler
PDF  12 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

MOC211-M... 数据表(HTML) 3 Page - ON Semiconductor

  MOC211-M... Datasheet HTML 1Page - ON Semiconductor MOC211-M... Datasheet HTML 2Page - ON Semiconductor MOC211-M... Datasheet HTML 3Page - ON Semiconductor MOC211-M... Datasheet HTML 4Page - ON Semiconductor MOC211-M... Datasheet HTML 5Page - ON Semiconductor MOC211-M... Datasheet HTML 6Page - ON Semiconductor MOC211-M... Datasheet HTML 7Page - ON Semiconductor MOC211-M... Datasheet HTML 8Page - ON Semiconductor MOC211-M... Datasheet HTML 9Page - ON Semiconductor Next Button
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©2005 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MOC20xM, MOC21xM Rev. 1.5
2
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
Parameter
Characteristics
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
< 150 VRMS
I–IV
< 300 VRMS
I–III
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
VPR
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
904
Vpeak
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
1060
Vpeak
VIORM
Maximum Working Insulation Voltage
565
Vpeak
VIOTM
Highest Allowable Over-Voltage
4000
Vpeak
External Creepage
≥ 4mm
External Clearance
≥ 4mm
DTI
Distance Through Insulation (Insulation Thickness)
≥ 0.4
mm
TS
Case Temperature(1)
150
°C
IS,INPUT
Input Current(1)
200
mA
PS,OUTPUT Output Power
(1)
300
mW
RIO
Insulation Resistance at TS, VIO = 500 V
(1)
> 109
Ω



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