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BUL89 数据表(PDF) 2 Page - STMicroelectronics

部件名 BUL89
功能描述  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

BUL89 数据表(HTML) 2 Page - STMicroelectronics

  BUL89 Datasheet HTML 1Page - STMicroelectronics BUL89 Datasheet HTML 2Page - STMicroelectronics BUL89 Datasheet HTML 3Page - STMicroelectronics BUL89 Datasheet HTML 4Page - STMicroelectronics BUL89 Datasheet HTML 5Page - STMicroelectronics BUL89 Datasheet HTML 6Page - STMicroelectronics  
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THERMAL DATA
Rthj-ca se
Thermal Resist ance Junction-Case
Max
1.14
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ICES
Collector Cut -of f
Current (VBE =0)
VCE =850 V
VCE =850 V
Tj = 125
oC
100
500
µA
µA
ICEO
Collector Cut -of f
Current (IB =0)
VCE =400 V
100
µA
VCEO(sus )
∗ Collector-Emitter
Sustaining Voltage
(IB =0)
IC =10 mA
L =25 mH
400
V
VEBO
Emitter-Base Voltage
(IC =0)
IE =10 mA
9
V
VCE(sat)
∗ Collector-Emitter
Saturat ion Voltage
IC =5 A
IB =1 A
IC =8 A
IB =1.6 A
IC =12 A
IB =2.4 A
1
1.5
5
V
V
V
VBE(s at)
∗ Base-Emitter
Saturat ion Voltage
IC =5 A
IB =1 A
IC =8 A
IB =1.6 A
1.3
1.6
V
V
hFE
∗
DC Current G ain
IC =5 A
VCE =5 V
IC =10 mA
VCE =5 V
10
10
40
ts
tf
INDUCTIVE LOAD
St orage Time
Fall Time
IC =8 A
IB1 =1.6 A
VBE(off) =-5 V
RBB =0
Ω
VCL = 350 V
L = 200
µH
1.5
55
2.3
110
µs
ns
ts
tf
INDUCTIVE LOAD
St orage Time
Fall Time
IC =8 A
IB1 =1.6 A
VBE(off) =-5 V
RBB =0
Ω
VCL = 350 V
L = 200
µH
Tj = 100
oC
1.9
80
µs
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
Derating Curve
BUL89
2/6



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